专利名称：THERMOELECTRIC MATERIALS BASED ON
SINGLE CRYSTAL AlInN-GaN GROWN BYMETALORGANIC VAPOR PHASE EPITAXY
发明人：Nelson Tansu,Hua Tong,Jing Zhang,Guangyu
Liu,Gensheng Huang
申请号：US12963136申请日：20101208
公开号：US20110240082A1公开日：20111006
专利附图：
摘要：The invention is a thermoelectric device fabricated by growing a single crystal
AlInN semiconductor material on a substrate, and a method of fabricating same. In apreferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed usingmetalorganic vapor phase epitaxy (MOVPE).
申请人：Nelson Tansu,Hua Tong,Jing Zhang,Guangyu Liu,Gensheng Huang
地址：Bethlehem PA US,Allentown PA US,Bethlehem PA US,Bethlehem PAUS,Bethlehem PA US
国籍：US,US,US,US,US
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